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The TO-247 (Transistor Outline 247) offers a robust, high-power packaging solution for integrated circuits in advanced electronic systems. Designed for efficient heat dissipation and reliability, this package is ideal for demanding applications in power electronics, automotive, industrial, and renewable energy sectors.
| 部品番号 | 説明 | メーカー | 在庫 | BOM に追加 |
|---|---|---|---|---|
| DSEI30-06A | Rectifiers rated for 600V and 37A applications | Littelfuse | 4,976 | |
| STW4N150 | Its rugged design ensures reliable performance in harsh environments and offers high surge capabilit | STMicroelectronics NV | 5,157 | |
| DSEI30-10A | DSEI30-10A: 30A Diode Switch, 1KV Voltage Handling, TO-247AD Package | Littelfuse | 4,469 | |
| DSEI60-06A | The FRED Low Vf series boasts superior forward voltage characteristics and impressive breakdown voltages reaching up to 1200V | Littelfuse | 4,350 | |
| DSEI60-12A | Rectifier Diode Switching 1.2KV 52A 60ns 2-Pin(2+Tab) TO-247AD | Ixys Integrated Circuits Division | 7,417 | |
| STGW60V60DF | Trench gate field-stop IGBT, V series 600 V, 60 A very high speed | Stmicroelectronics Nv | 7,357 | |
| STW20NM60 | N-channel power MOSFET with a 600V rating and a maximum current of 20A, packaged in a TO-247 enclosure | Stmicroelectronics | 6,927 | |
| STW9NK90Z | N-channel MOSFET with 900 V rating, 1.1 Ohm typ., and 8 A current capacity in TO-247 package | STMicroelectronics NV | 8,343 | |
| IKW40N120T2 | Trans IGBT Chip N-CH 1200V 75A 480W 3-Pin(3+Tab) TO-247 Tube | Infineon | 6,648 | |
| IPW65R080CFD | Explore the advanced capabilities of the IPW65R080CFD, an N-Channel MOSFET Transistor | Infineon | 9,800 | |
| SPW24N60C3 | This MOSFET transistor, model SPW24N60C3 from Infineon, features a high current handling capacity of 24 | Infineon | 4,188 | |
| NGTB50N120FL2WG | IGBT for Solar/UPS applications, 1200V and 50A | International Rectifier | 8,281 | |
| DSA90C200HB | Experience superior efficiency and gentle recovery with the DSA90C200HB Schottky diode, designed with low loss and a common cathode arrangement." | Ixys | 7,099 | |
| IRFP250N | Robust TO-package with a maximum operating voltage o | Infineon | 7,362 | |
| SCT2160KE | TO-247 N-channel Silicon Carbide Metal-Oxide Semiconductor FET with a drain current of 22A, voltage rating of 1200V, and on-resistance of 0.208 ohm | rohm semiconductor | 4,975 | |
| STW48N60M2 | N-channel 600 V, 60 mOhm typ., 42 A MDmesh M2 Power MOSFET in a TO-247 package | STMicroelectronics NV | 7,497 | |
| AOK40B65H2AL | AOK40B65H2AL is a N-channel IGBT chip capable of handling up to 650 volts and 80 amps, housed in a TO-247 package | Alpha And Omega Semiconductor | 7,916 | |
| APT1001RBN | APT1001RBN overview by Microchip Technology | Microchip | 6,074 | |
| BDW83C | High-power switching and amplificatio | Stmicroelectronics | 5,827 | |
| BU931P | Darlington Transistors NPN Power Darlington | Stmicroelectronics | 8,616 | |
| IHW15N120R3 | ROHS TO-247-3 IGBTs | infineon | 9,285 | |
| IHW40T120 | High-performance power semiconductor for automotive application | INFINEON | 6,439 | |
| IPW60R041C6 | Green Plastic MOSFET | Infineon | 7,479 | |
| IPW60R045CP | TO247-3 CoolMOS CP N-Channel 650V 60A MOSFET | Infineon | 7,379 | |
| IPW60R070CFD7 | 650V N-channel power MOSFET with 31A maximum current rating, packaged in TO-247 | Infineon | 9,190 | |
| IPW60R075CP | N-channel transistor MOSFET with TO-247 packaging, designed for operation at 600V and 39A | Infineon | 6,405 | |
| IPW60R160C6 | Infineon IPW60R160C6 N-channel MOSFET Transistor, 23.8 A, 650 V, 3-Pin TO-247 | INFINEON | 6,425 | |
| IPW60R199CP | Infineon IPW60R199CP N-channel MOSFET Transistor, 16 A, 650 V, 3-Pin TO-247 | INFINEON | 6,143 | |
| IPW65R190CFD | IPW65R190CFD N-Channel MOSFET Transistor | infineon | 8,228 | |
| MJH6284G | 100V 20A 160000mW Trans Darlington NPN 3-Pin TO-247 Tube | International Rectifier | 6,077 | |
| SCT2160KEC | High-performance Silicon Carbide SiC MOSFET with 1200V voltage, 20A current, and 160mOhm resistance | Rohm Semiconductor | 6,813 | |
| SPW11N60C3 | 11A, 600V, N-Channel Power MOSFET with 0.38ohm Resistance | INFINEON | 4,035 | |
| SPW15N60C3 | N-channel 600V 15A Power MOSFET with TO-247 package | Infineon | 9,074 | |
| SPW17N80C3 | ROHS compliant power MOSFET capable of handling up to 227W | Infineon | 9,512 | |
| SPW20N60S5 | This is the SPW20N60S5, an N-channel MOSFET rated for 600V and capable of handling currents as high as 20A | Infineon | 5,356 | |
| SPW32N50C3 | N-Channel MOSFET Transistor SPW32N50C3 | Infineon | 6,006 | |
| SPW47N65C3 | Experience top-tier efficiency and durability with the SPW47N65C3 N-Channel MOSFET Transistor | Infineon | 5,593 | |
| STPS30L40CW | TO-247 SILICON RECTIFIER DIODE 15A 40V | STMicroelectronics | 8,544 | |
| STPS30L60CW | Diode Schottky 60V 30A 3-Pin(3+Tab) TO-247 Tube | Stmicroelectronics | 5,222 | |
| STTA3006CW | The STTA3006CW is a diode array designed for general-purpose applications | Stmicroelectronics | 7,511 | |
| TIP147G | High-quality, durable construction for long-lasting performance | Onsemi | 9,134 | |
| DSI45-12A | Product code: DSI45-12A | IXYS | 7,650 | |
| SCT2080KEC | High-power N-Channel MOSFET with 1200V source voltage and low on-resistance | Rohm Semiconductor | 3,704 | |
| ALF08N16V | Ideal for general-purpose applications with low noise immunit | tt electronics | 5,166 | |
| APT60GT60BRG | IGBT chip for power transmission, N-channel, 600 volts, 100 amperes, TO-247 package | Microchip | 6,419 | |
| BUF420AW | As a member of the Bipolar Transistors - BJT category, BUF420AW presents itself as a versatile component for circuit implementation | Stmicroelectronics | 7,902 | |
| DH20-18A | Compact and powerful, this single diode offers superior protection against voltage spikes, overvoltage conditions, and electrical fault | IXYS | 6,662 | |
| DHG30I600HA | Rectifier Diode Switching 600V 30A 35ns 2-Pin(2+Tab) TO-247AD | IXYS | 7,412 | |
| DSEI30-12A | Diode Switching 1.2KV 26A 2-Pin(2+Tab) TO-247AD | Ixys Integrated Circuits Division | 6,540 | |
| DSEI60-02A | DSEI60-02A is an epitaxial diode from the DSEI Series | Littelfuse | 9,219 |