TO247-3
(397)
The TO-247-3 (Transistor Outline 247-3) offers a robust and reliable packaging solution for power semiconductor devices in various electronic systems. With its 3-lead configuration and efficient thermal design, this package is well-suited for high-power applications in industries such as automotive, industrial, and renewable energy.
| 部品番号 | 説明 | メーカー | 在庫 | BOM に追加 |
|---|---|---|---|---|
| IRFP4310ZPBF | TO-247AC packaged N-Channel MOSFET suitable for use in a variety of high-power electronic circuit designs | Infineon Technologies | 7,898 | |
| IRFP7530PBF | Tube Packaged N-Channel Silicon MOSFET, Suitable for High Power Applications with 60V Voltage Rating and 281A Maximum Current Rating | Infineon Technologies | 5,552 | |
| IXTX200N10L2 | High-power N-channel MOSFET with 3-pin configuration and isolated tab | Ixys Integrated Circuits Division | 9,676 | |
| SIHG20N50C-E3 | This N-channel TO-247AC-3 MOSFET, SIHG20N50C-E3, complies with the RoHS directive, ensuring environmental friendliness | Siliconix | 4,407 | |
| IRFP450PBF | MOSFET designed with a planar structure for voltages greater than or equal to 100V | Siliconix | 7,374 | |
| IRG4PH50UPBF | IRG4PH50UPBF by International Rectifier | Infineon Technologies | 8,606 | |
| APT1001R1BN | APT1001R1BN from Microchip Technology | Microchip Technology | 6,370 | |
| APT33GF120BRG | 1200V Non-Punch-Thru IGBT APT33GF120BRG | Microchip Technology | 6,535 | |
| APT38F80B2 | This MOSFET has a low on-resistance of 240mΩ at 20A and 10V gate-source voltage | Microchip Technology | 6,193 | |
| APT45GP120BG | Trans IGBT Chip N-CH 1200V 100A 625W 3-Pin(3+Tab) TO-247 Tube | Microchip Technology | 9,666 | |
| APT5020BN | High-power transistor for robust switching and amplification applications | Microchip Technology | 6,191 | |
| CLA60MT1200NHB | TRIAC Diode 1200V 66A(RMS) 410A 3-Pin(3+Tab) TO-247 Tube | Ixys Integrated Circuits Division | 6,381 | |
| CMF20120D | 42 A, 1200 V rating | Wolfspeed, Inc | 9,720 | |
| FCH023N65S3-F155 | 595 W N-Channel 23 mOhm SuperFET III Mosfet with Long Leads | Onsemi | 9,732 | |
| FGH40N60UFDTU | IGBT Transistor Chip, N-Type, 600V, 80A, 290W, 3-Pin (3+Tab), TO-247 Tube | Onsemi | 7,799 | |
| FGH75N60UFTU | FS Planar IGBT Transistors, N-Type, capable of handling 75A current at 600V voltage | Onsemi | 5,986 | |
| IKW50N60H3FKSA1 | IGBT Transistors designed for rapid switching | Infineon Technologies | 6,896 | |
| IPW90R800C3 | N-Channel 900V 6.9A Power MOSFET | Infineon Technologies | 5,714 | |
| IRFP064PBF | N-channel power MOSFET with a voltage rating of 60V and a current rating of 70A | Siliconix | 7,032 | |
| IRFP150PBF | IRFP150PBF N-Channel MOSFET, 41 A, 100 V, 3-Pin TO-247AC Vishay | Siliconix | 8,094 | |
| IRFP250PBF | Trans MOSFET N-CH 200V 30A | Siliconix | 9,883 | |
| IRFP254PBF | N-channel MOSFET,IRFP254 23A 250V | Siliconix | 7,775 | |
| IRFP3006PBF | IRFP3006PBF TO-247 MOSFETs ROHS | Infineon Technologies | 8,677 | |
| IRFP3206PBF | Tube packaging style for convenient handling and storage | Infineon Technologies | 7,205 | |
| IRFP32N50KPBF | N-channel HEXFET MOSFET with a voltage rating of 500V | Siliconix | 5,239 | |
| IRFP3710PBF | Transistor MOSFET N-channel with 100V voltage rating and 57A current capacity in a TO-247AC package | Infineon Technologies | 6,306 | |
| IRFP4229PBF | IRFP4229PBF High-Voltage N-Channel MOSFET TO-247AC | Infineon Technologies | 5,466 | |
| IRFP7430PBF | 40V MOSFET capable of handling 195A | Infineon Technologies | 5,694 | |
| IRFPG50PBF | N-channel MOSFET with a current rating of 6.1A and a voltage rating of 1000V | Vishay | 8,140 | |
| IRFPE50PBF | The IRFPE50PBF is a high-performance N-channel MOSFET designed for applications requiring high current and voltage levels | Vishay | 6,099 | |
| IRFPS37N50APBF | Transistor MOSFET N-CH 500V 36A 3-Pin TO-274AA T/R | Infineon Technologies | 6,880 | |
| IRGP4068DPBF | 600V 96A 330W N-Channel Transistor TO-247AC | Infineon Technologies | 5,307 | |
| IRGP50B60PDPBF | Infineon IRGP50B60PDPBF IGBT, 75 A 600 V, 3-Pin TO-247AC | Infineon Technologies | 6,357 | |
| IXBH16N170A | 150 Watt 16 Amp 1.7kV TO-247AD IGBTs ROHS | Ixys Integrated Circuits Division | 7,961 | |
| IXFH34N65X2 | Transistor for high-voltage power switching | Ixys Integrated Circuits Division | 7,373 | |
| IXFH46N65X2 | TO-247AD N-Ch Ultra Junction X2 Class Power MOSFET | Ixys Integrated Circuits Division | 5,358 | |
| IXFH60N50P3 | High voltage MOSFET with 60A current rating | Ixys Integrated Circuits Division | 7,638 | |
| IXSH35N140A | IXSH35N140A: N-Channel Insulated Gate Bipolar Transistor (IGBT) Chip, 1400V, 70A, 300mW, TO-247AD Configuration | Ixys Integrated Circuits Division | 7,187 | |
| IXTH30N60L2 | N-channel MOSFET transistor capable of handling 30A at 600V in TO-247AD package | Ixys Integrated Circuits Division | 7,767 | |
| KCF25A20 | Product Description: Diode Switching 200V 25A 3-Pin(3+Tab) TO-247, code KCF25A20 | Kyocera Corporation | 5,669 | |
| MBR40100PT | 1 Phase Schottky Rectifier Diode with 2 Elements, rated for 10A current and 100V reverse voltage | Taiwan Semiconductor Corporation | 5,117 | |
| MJW21193G | Transistor PNP 250V 16A TO-247 Rail | Onsemi | 5,481 | |
| SCT2280KEC | ROHM SCT2280KEC N-channel MOSFET Transistor | Rohm Semiconductor | 7,561 | |
| SCT2450KEC | SCT2450KEC is a SiC-based N-MOSFET transistor featuring a unipolar design, offering a voltage rating of 1 | Rohm Semiconductor | 6,820 | |
| SIHG47N60E-E3 | Trans MOSFET N-CH 600V 47A 3-Pin(3+Tab) TO-247AC Tube | Siliconix | 7,784 | |
| STW30NM60ND | 600 Volt Transistor | Stmicroelectronics | 9,351 | |
| TIP140G | TIP140G - Bipolar Power Transistor rated for 10 A and 60 V, NPN Darlington configuration | Onsemi | 6,938 | |
| VS-60APH03-N3 | 1-Phase Rectifier Diode with 1 Element | Siliconix | 8,629 | |
| 30CPU04 | 4 cpu04pbf reccomended alternatives rectifiers alt844 | Siliconix | 6,605 | |
| 80EPF04 | Rectifier Diode Switching 400V 80A 190ns 3-Pin(3+Tab) TO-247AC | Siliconix | 9,761 |