IS42S16160D-6TL

The IS42S16160D-6TL reimagines the possibilities of memory technology with its breakthrough 256Mb synchronous DRAM (SDRAM) integrated circuit. Operating at a rapid speed of 166 MHz and delivering a maximum data transfer rate of 333 Mbps/pin, this memory chip is designed to excel in high-performance computing, networking, and telecommunications applications. Its 4 banks of 1M x 16 bits and flexible burst length options (1, 2, 4, 8, and full page) provide the power and versatility needed to handle demanding data processing tasks with ease. With a low power consumption design and a voltage range of 2.5V to 2.75V, the IS42S16160D-6TL sets a new standard for energy efficiency and adaptability, making it an ideal choice for a wide range of electronic devices. Additionally, the device supports essential features such as auto refresh, self refresh, and a programmable mode register, enhancing its compatibility with diverse system architectures. Housed in a compact 54-pin TSOP II package, the IS42S16160D-6TL is tailored for space-constrained applications, without compromising on performance or reliability. By meeting industry standards, this memory chip ensures seamless integration with various platforms and systems, setting a new benchmark for memory solutions in the digital age

主な特長

• Clock frequency: 166, 143, 125, 100 MHz
• Fully synchronous; all signals referenced to a positive clock edge
• Two banks can be operated simultaneously and independently
• Dual internal bank controlled by A11 (bank select)
• Single 3.3V power supply
• LVTTL interface
• Programmable burst length – (1, 2, 4, 8, full page)
• Programmable burst sequence: Sequential/Interleave
• Auto refresh, self refresh
• 4096 refresh cycles every 128 ms
• Random column address every clock cycle
• Programmable CAS latency (2, 3 clocks)
• Burst read/write and burst read/single write operations capability
• Burst termination by burst stop and precharge command
• Byte controlled by LDQM and UDQM
• Package 400mil 50-pin TSOP-2