• MT29F8G16ADADAH4-IT:D VFBGA-63
MT29F8G16ADADAH4-IT:D VFBGA-63

MT29F8G16ADADAH4-IT:D

SLC NAND Flash Parallel 3.3V 8G-bit 512M x 16 63-Pin VFBGA

在庫:6,026

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概要 MT29F8G16ADADAH4-IT:D

Whether you are designing a new product or upgrading an existing system, the MT29F8G16ADADAH4-IT:D flash memory from Micron offers the reliability and performance you need. With its high capacity, wide operating temperature range, and robust design, this flash memory is a versatile solution for your data storage needs. Stay ahead of the curve with this cutting-edge flash memory product

MT29F8G16ADADAH4-IT:D

主な特長

  • Open NAND Flash Interface (ONFI) 1.0-compliant1
  • Single-level cell (SLC) technology
  • Organization
  • – Page size x8: 2112 bytes (2048 + 64 bytes)
  • – Page size x16: 1056 words (1024 + 32 words)
  • – Block size: 64 pages (128K + 4K bytes)
  • – Plane size: 2 planes x 2048 blocks per plane
  • – Device size: 4Gb: 4096 blocks; 8Gb: 8192 blocks 16Gb: 16,384 blocks
  • Asynchronous I/O performance
  • – tRC/tWC: 20ns (3.3V), 25ns (1.8V)
  • Array performance
  • – Read page: 25µs 3
  • – Program page: 200µs (TYP: 1.8V, 3.3V)3
  • – Erase block: 700µs (TYP)
  • Command set: ONFI NAND Flash Protocol
  • Advanced command set
  • – Program page cache mode4
  • – Read page cache mode 4
  • – One-time programmable (OTP) mode
  • – Two-plane commands 4
  • – Interleaved die (LUN) operations
  • – Read unique ID
  • – Block lock (1.8V only)
  • – Internal data move
  • Operation status byte provides software method for detecting
  • – Operation completion
  • – Pass/fail condition
  • – Write-protect status
  • Ready/Busy# (R/B#) signal provides a hardware method of detecting operation completion
  • WP# signal: Write protect entire device
  • First block (block address 00h) is valid when ship ped from factory with ECC. For minimum required ECC, see Error Management.
  • Block 0 requires 1-bit ECC if PROGRAM/ERASE cycles are less than 1000
  • RESET (FFh) required as first command after power-on
  • Alternate method of device initialization (Nand_In it) after power up (contact factory)
  • Internal data move operations supported within the plane from which data is read
  • Quality and reliability
  • – Data retention: 10 years
  • – Endurance: 100,000 PROGRAM/ERASE cycles
  • Operating voltage range
  • – VCC: 2.7–3.6V
  • – VCC: 1.7–1.95V
  • Operating temperature:
  • – Commercial: 0°C to +70°C
  • – Industrial (IT): –40ºC to +85ºC
  • Package
  • – 48-pin TSOP type 1, CPL2
  • – 63-ball VFBGA

仕様

以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。

Product Category NAND Flash RoHS Details
Series MT29F Brand Micron
Moisture Sensitive Yes Product NAND Flash
Product Type NAND Flash Factory Pack Quantity 1260
Subcategory Memory & Data Storage Unit Weight 0.180694 oz

保証と返品

保証、返品、および追加情報

  • QAと返品ポリシー ?

    部品の品質保証: 365 日

    返品・返金:90日以内

    返品・交換:90日以内

  • 配送と梱包 ?

    配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。

    部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。

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    特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。

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MT29F8G16ADADAH4-IT:D

SLC NAND Flash Parallel 3.3V 8G-bit 512M x 16 63-Pin VFBGA

在庫:

6,026