N25Q128A13ESF40F

The N25Q128A13ESF40F is built to last, boasting an impressive endurance of up to 100,000 program/erase cycles per sector and a data retention period of up to 20 years. Its reliable performance and long-term storage capabilities make it a perfect fit for a wide range of applications, from consumer electronics to automotive, industrial, and networking sectors, where dependable non-volatile storage is non-negotiable. This Flash memory chip promises to deliver superior functionality and reliability, making it an indispensable component for any cutting-edge technological solution

主な特長

• The memory is organized as 256 (64KB) main sectors that are further divided into 16 subsectors each (4096 subsectors in total). The memory can be erased one 4KB subsec tor at a time, 64KB sectors at a time, or as a whole.
• The memory can be write protected by software through volatile and nonvolatile protection features, depending on the application needs. The protection granularity is of 64KB (sector granularity) for volatile protections The device has 64 one-time programmable (OTP) bytes that can be read and programmed with the READ OTP and PROGRAM OTP commands. These 64 bytes can also be permanently locked with a PROGRAM OTP command. The device also has the ability to pause and resume PROGRAM and ERASE cycles by using dedicated PROGRAM/ERASE SUSPEND and RESUME instructions.