PC48F4400P0VB0EA

The PC48F4400P0VB0EA by Intel is a cutting-edge NAND Flash memory chip boasting a generous storage capacity of 4 gigabytes. Ideal for embedded systems and industrial applications, this chip excels in reliability and high-speed data storage. The parallel interface ensures seamless data transfer, while the 3.3-volt supply voltage and maximum clock frequency of 66 MHz offer optimal performance

主な特長

• „ High Performance Read-While-Write/Erase
• — Burst frequency at 66 MHz (zero wait states)
• —60ns Initial access read speed
• — 11 ns Burst mode read speed
• — 20 ns Page mode read speed
• — 4-, 8-, 16-, and Continuous-Word Burst mode reads
• — Burst and Page mode reads in all Blocks, across all partition boundaries
• — Burst Suspend feature
• — Enhanced Factory Programming at 3.1 µs/word „
• Security
• —128-BitOTP Protection Register:
• 64 unique pre-programmed bits + 64 user-programmable bits
• — Absolute Write Protection with VPP at ground
• — Individual and Instantaneous Block Locking/Unlocking with Lock-Down Capability„
• Quality and Reliability
• —Temperature Range:–40 °C to +85 °C
• — 100K Erase Cycles per Block
• — 90 nm ETOX™ IX Process
• — 130 nm ETOX™ VIII Process
• Architecture
• — Multiple 4-Mbit partitions
• — Dual Operation: RWW or RWE
• — Parameter block size = 4-Kword
• — Main block size = 32-Kword
• — Top or bottom parameter devices
• —16-bit wide data bus
• Software
• — 5 µs (typ.) Program and Erase Suspend latency time
• — Flash Data Integrator (FDI) and Common Flash Interface (CFI) Compatible
• — Programmable WAIT signal polarity
• Packaging and Power
• — 90 nm: 32- and 64-Mbit in VF BGA
• — 130 nm: 32-, 64-, and 128-Mbit in VF BGA
• — 130 nm: 128-Mbit in QUAD+ package
• — 56 Active Ball Matrix, 0.75 mm Ball-Pitch
• —VCC= 1.70 V to 1.95 V
• —VCCQ(90 nm) = 1.7 V to 1.95 V
• —VCCQ(130 nm) = 1.7 V to 2.24 V or 1.35 V to 1.80 V
• —VCCQ(130 nm) = 1.35 V to 2.24 V
• — Standby current (130 nm): 8 µA (typ.)
• — Read current: 8 mA (4-word burst, typ.)