STD7NM80
This MOSFET offers a power dissipation of 90W and is designed for operation at 5V with a leakage current of 250uA
数量 | 単価(USD) | 合計金額 |
---|---|---|
1 | $1.690 | $1.69 |
10 | $1.485 | $14.85 |
30 | $1.358 | $40.74 |
100 | $1.227 | $122.70 |
500 | $1.168 | $584.00 |
1000 | $1.143 | $1,143.00 |
在庫:7,870
- 90日間のアフター保証
- 365日の品質保証
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部品番号 : STD7NM80
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パッケージ/ケース : TO-252-3
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メーカー : Stmicroelectronics Nv
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コンポーネントの分類 : Single FETs, MOSFETs
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日付シート : STD7NM80 データシート (PDF)
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Series : STD7NM80
概要 STD7NM80
With its extremely low on-resistance and high dv/dt capability, the STD7NM80 is ideal for a wide range of applications where power efficiency and performance are paramount. Whether used in industrial equipment, renewable energy systems, or automotive applications, this Power MOSFET ensures optimal power management and reliable operation. The device's excellent avalanche characteristics further enhance its durability and safety, making it a standout choice for demanding power applications
主な特長
- Fast recovery time and low reverse leakage
- High isolation voltage and creepage distance
- Compliant with international safety standards
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Series | MDmesh™ | Product Status | Active |
FET Type | N-Channel | Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 800 V | Current - Continuous Drain (Id) @ 25°C | 6.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V | Rds On (Max) @ Id, Vgs | 1.05Ohm @ 3.25A, 10V |
Vgs(th) (Max) @ Id | 5V @ 250µA | Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 10 V |
Vgs (Max) | ±30V | Input Capacitance (Ciss) (Max) @ Vds | 620 pF @ 25 V |
Power Dissipation (Max) | 90W (Tc) | Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount | Supplier Device Package | DPAK |
Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Base Product Number | STD7 |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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