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FCP22N60N

2N60N, MOSFET, N-channel, TO-220, Tube

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概要 FCP22N60N

Experience the future of power electronics with the FCP22N60N SupreMOS MOSFET, a game-changer in high voltage super-junction technology. Through its advanced deep trench filling process, this MOSFET achieves the industry's lowest on-resistance, delivering superior performance and reliability for high frequency switching applications. From FPD TV power supplies to ATX power units, the FCP22N60N is the ideal choice for demanding power converter setups where efficiency and ruggedness are essential. Trust in the innovative design and precise control of SupreMOS technology to elevate your power management solutions to new heights

主な特長

  • BVDSS = 650V @ TJ = 150°C
  • RDS(on) = 140mΩ ( Typ.) @ VGS = 10V, ID = 11A
  • Ultra low gate charge ( Typ. Qg = 45nC )
  • Low effective output capacitance ( Typ. Coss.eff = 196.4pF )
  • 100% avalanche tested
  • RoHS compliant

応用

  • Reliable for diverse needs

仕様

以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。

Product Category MOSFET RoHS Details
REACH Details Technology Si
Mounting Style Through Hole Package / Case TO-220-3
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 600 V Id - Continuous Drain Current 22 A
Rds On - Drain-Source Resistance 140 mOhms Vgs - Gate-Source Voltage - 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage 2 V Qg - Gate Charge 45 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 205 W Channel Mode Enhancement
Tradename SupreMOS Series FCP22N60N
Brand onsemi / Fairchild Configuration Single
Fall Time 4 ns Forward Transconductance - Min 22 S
Height 16.3 mm Length 10.67 mm
Product Type MOSFET Rise Time 16.7 ns
Factory Pack Quantity 1000 Subcategory MOSFETs
Transistor Type 1 N-Channel Type SupreMOS
Typical Turn-Off Delay Time 49 ns Typical Turn-On Delay Time 16.9 ns
Width 4.7 mm Unit Weight 0.068784 oz

保証と返品

保証、返品、および追加情報

  • QAと返品ポリシー

    部品の品質保証: 365 日

    返品・返金：90日以内

    返品・交換：90日以内

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